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类型 基础研究 预答辩日期 2017-09-23
开始(开题)日期 2015-12-09 论文结束日期 2017-05-25
地点 金陵院123 论文选题来源 非立项    论文字数 7.7 (万字)
题目 基于SOI的高速集成光波导调制器件的研究
主题词 SOI,集成,光波导,调制器件
摘要 高速光调制器对光交叉、光互联系统的构建起到了十分重要的作用, 是当前光通信网络的核心器件。得益于集成光子学的发展,集成光调制器件的研究倍受重视。其中,基于绝缘体上硅(Silicon on Insulator,SOI)平台的光波导调制器具有尺寸小、功耗低、集成度高、响应速率快等优点,成为了国内外的研究焦点。但是,SOI光调制器在传输损耗、尺寸、功耗、调制深度等方面都需要进一步的改善与提高。本论文主要围绕这些问题,提出了如下的改进措施和设计思路,并对基于不同工作机理的(热光、载流子色散、电光、全光)SOI光波导调制器进行了理论分析和实验研究。 提出了一种基于光子-表面等离子激元(Surface Plasmon Polariton,SPP)混合集成的1×2马赫-曾德尔干涉(Mach-Zehnder Interference,MZI)型热光开关。其中,介质沉积型SPP波导构成相位调制臂,其余部分由Si波导组成。相较于传统的硅基热光调制器,该开关结合了Si波导传输损耗低和介质沉积型SPP波导尺寸小、热光调制效率高的优势。其调制臂长只有70 μm,开关功耗仅为7 mW,响应时间是6.7 μs,且器件的插损被有效地控制在10 dB以内。 提出了一种基于重掺杂Si波导的载流子色散型n-p-n结等离子吸收调制器。通过重掺杂使Si获得金属性质,可以支持SPP波的传输,并且利用其强模场束缚能力大大减小调制器的尺寸。相较于普通的p-i-n型硅基调制器,超高载流子掺杂浓度可以使该器件的调制消光比获得很大提升。多物理场的仿真结果表明,尽管这种器件的调制区域仅有1 μm2,然而其调制深度可以达到25 dB,且具有2 GHz的调制频率。 针对Si材料电光性质弱的缺陷,提出了一种Si波导与掺镧的锆钛酸铅(PLZT)电光薄膜相结合的异质结型电光环形调制器。采用折射率大的Si作为芯层可以有效地减小器件尺寸,而选择电光系数高的PLZT薄膜作为包层则能够使器件获得明显的电光效应。此外,通过电极结构的优化可以得到32 dB的大调制深度和14 GHz的高调制频率。同时,文中还设计了一种基于SPP波导的非对称Au-PLZT-Au电光环形调制器,可进一步发挥PLZT优异的电光特性及SPP波导对光场的强束缚能力,该调制器的尺寸只有20 μm2,而调制深度则高于25 dB。 提出了一种低功耗、高集成度的Si-SPP混合结构全光调制器,并实验上研制出了其中的关键核心元件——等离子Fano共振型光波导调制单元。该器件利用结构紧凑的Au等离子纳米谐振腔进行调制,由低损耗的Si波导进行信号传递。实现了信号光以平行于芯片表面的方向在谐振腔中“水平”地激发出等离子模式,而调制光源可以以垂直方向入射。实验结果证实,该等离子谐振腔在1514 ~ 1600 nm波段范围内具有十分显著的Fano共振特性,且透射光谱会随着谐振腔结构参数的改变而发生变化。此外,理论计算的结果表明,该器件具有高达1600 nm/RIU的折射率敏感性。
英文题目 THE INVESTIGATION OF HIGH-SPEED SOI-BASED INTEGRATED OPTICAL WAVEGUIDE MODULATORS
英文主题词 SOI, integrated, optical waveguide, modulators
英文摘要 High speed optical modulator is a key device for contemporary optical communication networks, which plays an important role in the constructions of optical cross-connect and inter-connect systems. Thanks to the rapid development of photonics integration, the research on integrated optical modulators has obtained great attention. As optical modulator based on SOI platform has the advantages of small size, low power consumption, high integration, and fast response, it has gradually become a research hotspot at home and abroad. However, SOI compatible optical modulator still needs further improvements and optimizations in the loss, size, power consumption, modulation depth and so on. Addressing the problems above, many practical solutions and design ideas were presented in this paper. Moreover, SOI optical waveguide modulators based on different physical effects (thermo-optic, carrier-dispersion, electro-optic, and all-optic) were also investigated theoretically and experimentally. A MZI-type 1×2 thermo-optic switch based on photonics-SPP hybrid integration is proposed in this paper. The phase modulation arms are composed of dielectric-loaded SPP waveguides, while other parts of MZI structure consist of Si waveguides. Compared with the conventional Si-based thermo-optic modulators, this switch has combined low propagation loss of Si waveguide with small size and high thermo-optic modulation efficiency of dielectric-loaded SPP waveguide. The length of modulation arm is only 70 μm, the power consumption is 7 mW, the response time is 6.7 μs, and the insertion loss of device is limited below 10 dB. An n-p-n type and carrier-dispersion based plasmonic electro-absorption modulator taking advantage of highly doped Si waveguide is presented. Making Si to acquire metal-like properties by heavy doping can help to support the propagation of SPP waves, which is utilized to decrease the size of device due to its strong mode confinement capacity. Compared to the most p-i-n type Si-based modulators, the modulation extinction ratio of our device is improved with extreme high doping carrier concentration. Multiphysics simulation results have revealed that although the footprint of modulation area of device is only 1 μm2, its modulation depth could reach 25 dB, which also owns a modulation frequency of 2 GHz. Addressing the weak electro-optical properties of Si, a heterogeneous electro-optic ring modulator that combines Si waveguides with PLZT thin film is proposed in this paper. The size of device is reduced effectively with the adoption of high refractive index Si as core layer, and an obvious electro-optic effect can be achieved through selecting PLZT film with large electro-optic coefficient as cladding layer. Besides, a large modulation depth of 32 dB and a high modulation frequency of 14 GHz are obtained by optimizing the configurations of integrated electrodes. Meanwhile, an asymmetric Au-PLZT-Au electro-optic ring modulator based on SPP waveguides is also designed here, which shows both excellent electro-optical properties of PLZT and strong optical mode confinement capacities of SPP waveguide. The size of this modulator is only 20 μm2, and the modulation depth is larger than 25 dB. A power efficient and high integration all-optic modulator based on Si-SPP hybrid structure is presented here. And the plasmonic Fano waveguide modulation device is fabricated experimentally, which is the core part of the proposed all-optic modulator. The Au plasmonic nanocavity with compact structure is used as modulation unit, while Si waveguides with low propagation loss are utilized to transmit optical signals. Adopting signal light that is parallel to the chip surface to excite plasmonic modes in the nanocavity ‘horizontally’ is realized so that the pump light can incident perpendicular to the chip. The experimental results confirm that the plasmonic nanocavity could exhibit highlighted Fano resonance within the wavelength range of 1514 ~ 1600 nm, and the transmission spectrum varied with the change of structural parameters of nanocavity. Besides, the simulation result reveals that the device owns a high refractive index sensitivity of 1600 nm/RIU.
学术讨论
主办单位时间地点报告人报告主题
东南大学先进光子学中心 2016.1.12 南京,东南大学,金陵院 戚志鹏 2015年工作汇报
东南大学先进光子学中心 2017.1.14 南京,东南大学,金陵院 戚志鹏 2016年工作汇报
东南大学先进光子学中心 2013.7.23 南京,东南大学,金陵院 戚志鹏 PLZT电光材料文献汇总(一)
东南大学先进光子学中心 2013.7.27 南京,东南大学,金陵院 戚志鹏 PLZT电光材料文献汇总(二)
东南大学先进光子学中心 2013.12.26 南京,东南大学,金陵院 戚志鹏 2013年工作汇报
东南大学先进光子学中心 2014.9.11 南京,东南大学,金陵院 戚志鹏 1x16PLZT电光开关性能测试
东南大学先进光子学中心 2015.1.10 南京,东南大学,金陵院 戚志鹏 2014年工作汇报
东南大学先进光子学中心 2015.11.27 南京,东南大学,金陵院 戚志鹏 Plasmonic Fano devices overview
     
学术会议
会议名称时间地点本人报告本人报告题目
The 6th Conference on Advances in Optoelectronics and Micro/nano-optics 2017.4.26 江苏,南京 Resonances in Ultracompact Silicon-on-Insulator Compatible Integrated Photonic-Plasmonic Hybrid Circuits
西湖光电子 2014.11.1 浙江,杭州 Inductively coupled plasmas (ICP) etching of PZT thin films for fabricating optical waveguide with photoresist/aluminum bilayer masking
SPIE Photonics West 2015.2.11 美国,旧金山 Inductively coupled plasmas (ICP) etching of PZT thin films for fabricating optical waveguide with photoresist / aluminum bilayer masking
     
代表作
论文名称
Ultra-Compact On-chip Electro-Optic Waveguide Ring Resonators Based on Asymmetric Au-(Pb, La)(Zr, Ti
Fast response and low power consumption 1×2 thermo-optic switch based on dielectric-loaded surface p
Design and Analysis of a Compact SOI-Based Aluminum/Highly Doped p-Type Silicon Hybrid Plasmonic Mod
Design and Investigation of a Novel Silicon/Ferroelectric Electro-Optical Microring Modulator.
Inductively coupled plasmas (ICP) etching of PZT thin films for fabricating optical waveguide with p
A silicon waveguide-coupled gold rod embedded microring resonator
 
答辩委员会组成信息
姓名职称导师类别工作单位是否主席备注
倪晓武 正高 教授 博导 南京理工大学 主任委员
王亚伟 正高 教授 博导 江苏大学
恽斌峰 正高 教授 博导 东南大学
张雄 正高 教授 博导 东南大学
顾兵 正高 教授 博导 东南大学
      
答辩秘书信息
姓名职称工作单位备注
钟嫄 正高 高工 东南大学 秘书